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Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate
| Content Provider | Scilit |
|---|---|
| Author | Boudart, B. Gaquière, C. Constant, M. Lorriaux, A. Lefebvre, N. |
| Copyright Year | 1999 |
| Description | Journal: Journal of Raman Spectroscopy |
| Related Links | https://analyticalsciencejournals.onlinelibrary.wiley.com/doi/pdf/10.1002/(SICI)1097-4555(199908)30:8<715::AID-JRS439>3.0.CO;2-T |
| Ending Page | 719 |
| Page Count | 5 |
| Starting Page | 715 |
| ISSN | 03770486 |
| e-ISSN | 10974555 |
| DOI | 10.1002/%28sici%291097-4555%28199908%2930%3A8%3C715%3A%3Aaid-jrs439%3E3.3.co%3B2-k |
| Journal | Journal of Raman Spectroscopy |
| Issue Number | 8 |
| Volume Number | 30 |
| Language | English |
| Publisher | Wiley-Blackwell |
| Publisher Date | 1999-08-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Raman Spectroscopy Social Work Raman Spectroscopy Sinx Deposition Undoped Ga0.47in0.53as Inp Substrate Ga0.47in0.53as Material |
| Content Type | Text |
| Resource Type | Article |
| Subject | Spectroscopy Materials Science |