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The Atomic Structure of Threading Dislocations from Low-Angle to High-Angle Grain Boundaries in GaN/Sapphire Epitaxial Layers
| Content Provider | Scilit |
|---|---|
| Author | Potin, V. Nouet, G. Ruterana, P. Pond, R. C. |
| Copyright Year | 1999 |
| Description | Journal: Physica Status Solidi (b) |
| Ending Page | 648 |
| Starting Page | 645 |
| ISSN | 2573508X |
| e-ISSN | 15213951 |
| DOI | 10.1002/%28sici%291521-3951%28199911%29216%3A1%3C645%3A%3Aaid-pssb645%3E3.3.co%3B2-3 |
| Journal | Physica Status Solidi (b) |
| Issue Number | 1 |
| Volume Number | 216 |
| Language | English |
| Publisher | Wiley-Blackwell |
| Publisher Date | 1999-11-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Physica Status Solidi (b) Cultural Studies Low Angle Epitaxial Layers Threading Dislocations Grain Boundaries High Angle |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Condensed Matter Physics |