NDLI: "Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon

Content Provider	Scilit
Author	Capaz, R. B. Assali, L. V. C. Kimerling, L. C. Cho, K. Joannopoulos, J. D.
Copyright Year	1999
Description	A novel microscopic mechanism for hydrogen-enhanced oxygen diffusion in p-doped silicon is proposed. A path for joint diffusion of O and H is obtained from an ab-initio molecular dynamics "kick" simulation. The migration pathway consists of a two-step mechanism, with a maximum energy of 1.46 eV. This path represents a 0.54 eV reduction in the static barrier when compared with the diffusion of isolated O in Si, in excellent agreement with experiments.
Related Links	http://www.scielo.br/pdf/bjp/v29n4/v29n4a01.pdf
Ending Page	615
Page Count	5
Starting Page	611
ISSN	01039733
e-ISSN	16784448
DOI	10.1590/s0103-97331999000400002
Journal	Brazilian Journal of Physics
Issue Number	4
Volume Number	29
Language	English
Publisher	FapUNIFESP (SciELO)
Publisher Date	1999-12-01
Access Restriction	Open
Subject Keyword	Brazilian Journal of Physics Applied Physics Ab Initio Diffusion in Silicon Hydrogen Enhanced Enhanced Oxygen Diffusion
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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"Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon