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Effect of Location of Zero Gauss Plane on Oxygen Concentration at Crystal Melt Interface During Growth of Magnetic Silicon Single Crystal Using Czochralski Technique
| Content Provider | Scilit |
|---|---|
| Author | Vegad, Mitesh Bhatt, N. M. |
| Copyright Year | 2016 |
| Description | Journal: Procedia Technology |
| Related Links | https://core.ac.uk/download/pdf/82053399.pdf |
| Ending Page | 487 |
| Page Count | 8 |
| Starting Page | 480 |
| ISSN | 22120173 |
| DOI | 10.1016/j.protcy.2016.03.053 |
| Journal | Procedia Technology |
| Volume Number | 23 |
| Language | English |
| Publisher | Elsevier BV |
| Publisher Date | 2016-01-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Procedia Technology Numerical Simulation Oxygen Concentration Crystal Melt Interface Concentration At Crystal |
| Content Type | Text |
| Resource Type | Article |