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A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations
| Content Provider | Scilit |
|---|---|
| Author | Donetti, L. Sampedro, C. Ruiz, F. G. Godoy, A. Gamiz, F. |
| Copyright Year | 2019 |
| Description | Journal: Solid-State Electronics |
| Related Links | https://digibug.ugr.es/bitstream/10481/56526/4/donetti_sse_thorough.pdf |
| Ending Page | 25 |
| Page Count | 7 |
| Starting Page | 19 |
| ISSN | 00381101 |
| DOI | 10.1016/j.sse.2019.03.044 |
| Journal | Solid-State Electronics |
| Volume Number | 159 |
| Language | English |
| Publisher | Elsevier BV |
| Publisher Date | 2019-03-21 |
| Access Restriction | Open |
| Subject Keyword | Journal: Solid-State Electronics Gate-all-around Mosfet Monte Carlo Simulation Short-channel Effects Nanowire Orientation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |