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Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion
| Content Provider | Scilit |
|---|---|
| Author | Kocyigit, Adem Orak, Ikram Turut, Abdulmecit |
| Copyright Year | 2018 |
| Description | Journal: Materials Research Express Owing to importance of ZnO in electronics, Au/ZnO/n-type Si device was fabricated to investigate its dielectric properties by aid of capacitance-conductance-voltage measurements. While the ZnO thin film layer on the n-type Si was formed by atomic layer deposition (ALD) technique, the rectifying and ohmic contacts were obtained by thermal evaporation. The surface morphology of ZnO thin film was characterized using atomic force microscopy (AFM) to show its compatibility as interfacial layer in the Au/ZnO/n-type Si device. The dielectric properties of the device were examined in terms of dielectric parameters such as dielectric constant (ε^'), dielectric loss (ε^''), loss tangent (tan δ), the real and imaginary parts of electric modulus (M^'and M^'') and ac electrical conductivity (σ) depending on applied voltages (from -1 to 2 V) and temperatures (from 140 K to 360 K) ranges. Results have revealed that interfacial polarization and charge carriers are the important parameters to affecting the dielectric properties of the device with changing temperature. The device can be used at wide range temperatures. |
| Related Links | http://iopscience.iop.org/article/10.1088/2053-1591/aab2e3/pdf |
| ISSN | 20531591 |
| e-ISSN | 20531591 |
| DOI | 10.1088/2053-1591/aab2e3 |
| Journal | Materials Research Express |
| Issue Number | 3 |
| Volume Number | 5 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2018-02-28 |
| Access Restriction | Open |
| Subject Keyword | Journal: Materials Research Express Condensed Matter Physics Dielectric Properties |
| Content Type | Text |
| Resource Type | Article |
| Subject | Surfaces, Coatings and Films Metals and Alloys Biomaterials Electronic, Optical and Magnetic Materials Polymers and Plastics |
