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Physics of the formation of microdefects in dislocation-free monocrystals of float-zone silicon

Content Provider	Scilit
Author	Talanin, V. I. Talanin, I. E. Levinson, D. I.
Copyright Year	2002
Description	Journal: Semiconductor Science and Technology We study non-doped dislocation-free monocrystals of float-zone silicon using transmission electronic microscopy, optical microscopy and x-ray topography. The crystals were obtained with various growth rates (1–9 mm $min^{−1}$) and were subjected to various kinds of thermal processing. We experimentally determine the temperatures at which microdefects of various types form, and we establish the mechanism of transformation of interstitial microdefects. On the basis of data in the literature and new results obtained by authors, we establish that the formation of microdefects in silicon occurs on two independent mechanisms: vacancy and interstitial. As a result of both these mechanisms, D-microdefects will be formed as interstitials agglomerate. We suggest that the critical parameter V/G = $C_{crit}$ describes the conditions of emerging (vanishing) vacancy microdefects. On the basis of these results, we suggest a physical model of the formation of microdefects in dislocation-free monocrystals of float-zone silicon, and we discuss other known models.
Related Links	http://iopscience.iop.org/article/10.1088/0268-1242/17/2/303/pdf
Ending Page	113
Page Count	10
Starting Page	104
ISSN	02681242
e-ISSN	13616641
DOI	10.1088/0268-1242/17/2/303
Journal	Semiconductor Science and Technology
Issue Number	2
Volume Number	17
Language	English
Publisher	IOP Publishing
Publisher Date	2002-01-11
Access Restriction	Open
Subject Keyword	Journal: Semiconductor Science and Technology Metallurgy and Metallurgical Engineering Optical Microscopy Transmission Electron Microscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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