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Unoccupied electronic states of 2D Si on Ag- 3 -Si(111)
| Content Provider | Scilit |
|---|---|
| Author | Mrezguia, Hela Giovanelli, Luca Ksari, Younal Akremi, Abdelwahab Themlin, Jean-Marc |
| Copyright Year | 2021 |
| Description | Journal: Journal of Physics: Condensed Matter Optimizing substrate characterization to grow 2D Si layers on surfaces is a major issue towards the development of synthesis techniques of the promising silicene. We have used inverse photmionspectroscopy (IPES) study the electronic band structure of an ordered 2D Si layer the √3×√3 - Ag/Si(111) surface -(√3-Ag ). Exploiting the large upwards band bending of the √3-Ag substrate, we could investigate the evolution of the unoccupied surface and interface states in most of the Si band gap. In particular, the k//-dispersion of the √3-Ag free-electron-like S1 surface state measuredby IPES, is reported for the first time. Upon deposition of ~ 1M L Si on √3-Ag maintained at ~200°C, the interface undergoes a metal-insulator transition with the complete disappearance of the S1 state. The latter is replaced by a higher-lying state with a minimum at 1.0 eV above the Fermi level. The origin of this new state is discussed in terms of various Si 2D structures including silicene. |
| Related Links | https://iopscience.iop.org/article/10.1088/1361-648X/abe794/pdf |
| ISSN | 09538984 |
| e-ISSN | 1361648X |
| DOI | 10.1088/1361-648x/abe794 |
| Journal | Journal of Physics: Condensed Matter |
| Issue Number | 22 |
| Volume Number | 33 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2021-06-02 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics: Condensed Matter Condensed Matter Physics Interface Electronic Structure Inverse Photoemission |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Materials Science |
