Loading...
Please wait, while we are loading the content...
Similar Documents
Optoelectronic characteristics of MEH-PPV + BT blend thin films in polymer light emitting diodes
| Content Provider | Scilit |
|---|---|
| Author | Bidgoli, M. Massah Mohsennia, M. Boroumand, F. Akbari Nia, A. Mohsen |
| Copyright Year | 2015 |
| Description | Journal: Semiconductor Science and Technology Due to the unique optical and electronic properties of conjugated polymers, much research has been conducted to study the effect of the incorporation of electron-transporting materials on the polymer blends’ compatibility and their capability for use in optoelectronic devices. In this work, to characterize the optoelectronic properties of blend thin films of poly [2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) with benzothiadiazole (BT), polymer light- emitting diodes (PLEDs) with single-emission layers of MEH-PPV + BT blends have been fabricated. The influence of MEH-PPV + BT blend weight ratios over ITO/PEDOT:PSS/MEH-PPV + BT/Al PLEDs performances, e.g., lifetime, turn-on voltage, and current density-voltage (J-V) characteristics, has been studied. According to the obtained results, the turn-on voltage of the devices successfully decreased with the addition of the BT as an electronic transportation material. At an optimum condition, we obtained a turn-on voltage as low as 5 V and a lifetime of about 190 h for a device incorporating 65% BT. The logarithmic plots of the J-V characteristics of the fabricated devices showed a power law behavior (J ∝ Vk+1) with three distinct regions. The J-V characteristics have been explained by the Fowler–Nordheim (FN) tunneling model. It was found that the hole-injection barrier height decreases with increasing BT content in the range of 0–65%. According to the obtained results, in all of our investigations, the electroluminescence (EL) originated exclusively from the MEH-PPV material, even for the high BT contents. |
| Related Links | http://iopscience.iop.org/0268-1242/30/6/065016/pdf/0268-1242_30_6_065016.pdf |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/30/6/065016 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 6 |
| Volume Number | 30 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2015-06-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Condensed Matter Physics Light Emitting Diodes Conjugated Polymers |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |