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Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field
| Content Provider | Scilit |
|---|---|
| Author | Li, Hengheng Zhou, Zhongpo Zhang, Kelei Wang, Haiying |
| Copyright Year | 2019 |
| Description | Journal: Nanotechnology Two-dimensional materials have recently been the focus of extensive research. Graphene-based vertical van der Waals heterostructures are expected to design and fabricate novel electronic and optoelectronic devices. Monolayer gallium telluride is a graphene-like nanosheet synthesized in experiment. Here, the electronic properties of GaTe/graphene heterostructure are investigated under the interlayer coupling and the applied perpendicular electric field. The results show that the electronic properties of the GaTe and the graphene are preserved, and the energy bandgap of graphene is opened to 13.5 meV in the GaTe/graphene heterostructure. It is found that the n-type Schottky contact is formed in the GaTe/graphene heterostructure, which can be tuned by the interlayer coupling, and the applying electric field. Moreover, a transformation from the n-type to p-type Schottky contact is observed when the interlayer distance is smaller than 3.15 Å or the applied electric field is larger than 0.05 V/Å. These properties are fundamental to the design of new Schottky nanodevices based on GaTe/graphene heterostructure. |
| Related Links | https://iopscience.iop.org/article/10.1088/1361-6528/ab2d67/pdf |
| ISSN | 09574484 |
| e-ISSN | 13616528 |
| DOI | 10.1088/1361-6528/ab2d67 |
| Journal | Nanotechnology |
| Issue Number | 40 |
| Volume Number | 30 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2019-06-27 |
| Access Restriction | Open |
| Subject Keyword | Journal: Nanotechnology Gate/graphene Heterostructure Interlayer Distance |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering |
