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Rapid thermal processing of zinc diffusion in indium phosphide
| Content Provider | Scilit |
|---|---|
| Author | Schade, Ulrich Enders, P. |
| Copyright Year | 1992 |
| Description | Journal: Semiconductor Science and Technology A stripe heater has been used to diffuse zinc into semi-insulating and n-type (001) InP from a thin spun-on zinc silica film. The diffusion profiles were investigated by means of secondary ion mass spectroscopy and capacitance-voltage measurements. Diffusion depth and activation energy of an effective diffusion coefficient are compared with those published for Zn ampoule diffusion. For the diffusion of Zn in semi-insulating InP an activation energy of 1.35 eV was found. An expression for the effective diffusion coefficient for Zn in InP is derived and compared with results of a Boltzmann-Matano analysis of diffusion profiles. As a result the zinc diffusion can be described by the interstitial-substitutional model, where Zn diffuses as a singly positive charged interstitial and acts as an acceptor by filling an In vacancy. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/7/6/006/pdf |
| Ending Page | 757 |
| Page Count | 6 |
| Starting Page | 752 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/7/6/006 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 6 |
| Volume Number | 7 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1992-06-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Condensed Matter Physics Effective Diffusion |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
