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GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors
| Content Provider | Scilit |
|---|---|
| Author | Takeuchi, Tetsuya Kamiyama, Satoshi Iwaya, Motoaki Akasaki, Isamu |
| Copyright Year | 2018 |
| Description | Journal: Reports on Progress in Physics This paper describes the status and prospects of gallium nitride-based vertical-cavity surface-emitting lasers (VCSELs) with semiconductor-based distributed Bragg reflectors. These optoelectronic devices which emit laser light from the violet to green region are expected to be a superior light source for next-generation displays and illumination, such as retinal scanning displays and adaptive headlights. The development status and prospects are discussed in comparison with already commercialized gallium arsenide-based infrared VCSELs. List of headings 1. Introduction 2. GaN-based distributed Bragg reflectors 3. Current-injected GaN-based VCSELs 4. Future directions 4-1. Buried tunnel junctions 4-2. Convex structure 5. Conclusion |
| Related Links | http://iopscience.iop.org/article/10.1088/1361-6633/aad3e9/pdf |
| ISSN | 00344885 |
| e-ISSN | 13616633 |
| DOI | 10.1088/1361-6633/aad3e9 |
| Journal | Reports on Progress in Physics |
| Issue Number | 1 |
| Volume Number | 82 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2018-07-17 |
| Access Restriction | Open |
| Subject Keyword | Journal: Reports on Progress in Physics Blue Light-emitting Diodes Distributed Bragg Reflectors Gallium Nitride Vertical-cavity Surface-emitting Lasers |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Medicine |
