The dielectric function of Bi based on a two-band model

Content Provider	Scilit
Author	Alstrom, P. Nielsen, H.
Copyright Year	1981
Description	Journal: Journal of Physics C: Solid State Physics The general formula for the dielectric function epsilon ( omega ,q) for q to 0 is used to calculate the frequency dependent dielectric function of the semimetal Bi. Both the electrons at the L-points and the holes at the T-point are described by two-band models for which k.p theory gives the dispersion relation $E(E+E_{G})=E_{g}$ Sigma _{i=1}^{3}(h(cross)^{2}k_{i}^{2}$/2m_{i}$*). At room temperatures the calculation shows that the unknown temperature dependence of $m_{2}$* cannot deviate much from the T-dependence of $m_{1}$* and $m_{3}$* found by Vecchi and Dresselhaus (1974). Further it turns out that the difference between the values of epsilon$ _{perpendicular to }$ and epsilon /sub ///( perpendicular to and // to the trigonal axis) can be explained by the contribution of the holes. Finally, the calculation can be used for doped Bi. The results for the change in epsilon by doping agree with measurements on Sb-doped Bi.
Related Links	http://iopscience.iop.org/article/10.1088/0022-3719/14/8/012/pdf
Ending Page	1161
Page Count	9
Starting Page	1153
ISSN	00223719
DOI	10.1088/0022-3719/14/8/012
Journal	Journal of Physics C: Solid State Physics
Issue Number	8
Volume Number	14
Language	English
Publisher	IOP Publishing
Publisher Date	1981-03-20
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics C: Solid State Physics Applied Physics Condensed Matter Physics Room Temperature Dispersion Relation
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Condensed Matter Physics Engineering