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Approaching the Ni percolation threshold by thin-film irradiation
| Content Provider | Scilit |
|---|---|
| Author | Aprili, M. Nédellec, P. |
| Copyright Year | 1997 |
| Description | Journal: Journal of Physics: Condensed Matter We have reproduced a percolating structure in thin Ni films by an inhomogeneous sputtering process. The morphological disorder has been studied using TEM and ` in situ' transport measurements during ion irradiation. The fluence dependence of the resistance shows a singularity following a 2D percolation law. The formation of the hole structure is consistent with a Poisson mechanism. A computer simulation developed using a code based on a Poisson statistics allows us to account for the experimental values of the percolation threshold and the overall shape of the infinite cluster. |
| Related Links | http://iopscience.iop.org/article/10.1088/0953-8984/9/14/014/pdf |
| Ending Page | 3009 |
| Page Count | 11 |
| Starting Page | 2999 |
| ISSN | 09538984 |
| e-ISSN | 1361648X |
| DOI | 10.1088/0953-8984/9/14/014 |
| Journal | Journal of Physics: Condensed Matter |
| Issue Number | 14 |
| Volume Number | 9 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1997-04-07 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics: Condensed Matter Metallurgy and Metallurgical Engineering Condensed Matter Physics Thin Film Percolation Threshold Computer Simulation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Materials Science |