NDLI: SiGe quantum dot crystals with periods down to 35 nm

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SiGe quantum dot crystals with periods down to 35 nm

Content Provider	Scilit
Author	Dais, C. Mussler, G. Fromherz, T. Müller, E. Solak, H. H. Grützmacher, D.
Copyright Year	2015
Description	Journal: Nanotechnology By combining extreme ultraviolet interference lithography with Si/Ge molecular beam epitaxy, densely packed quantum dot (QD) arrays with lateral periodicities down to 35 nm are realized. The QD arrays are featured by perfect alignment and remarkably narrow size distribution. Also, such small periodicities allow the creation of three-dimensional QD crystals by vertical stacking of Si/Ge layers using very thin Si spacer layers. Simulations show that the distances between adjacent QDs are small enough for coupling of the electron states in lateral as well as vertical directions.
Related Links	http://iopscience.iop.org/0957-4484/26/25/255302/pdf/0957-4484_26_25_255302.pdf
ISSN	09574484
e-ISSN	13616528
DOI	10.1088/0957-4484/26/25/255302
Journal	Nanotechnology
Issue Number	25
Volume Number	26
Language	English
Publisher	IOP Publishing
Publisher Date	2015-06-02
Access Restriction	Open
Subject Keyword	Journal: Nanotechnology Extreme Ultraviolet Molecular Beam Epitaxy Combining Extreme Interference Lithography
Content Type	Text
Resource Type	Article
Subject	Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering

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