NDLI: Slip on the surface of silicon wafers under laser irradiation: Scale effect

Content Provider	Scilit
Author	Jia, Zhi-Chao Li, Ze-Wen Zhou, Jie Ni, Xiao-Wu
Copyright Year	2017
Description	Journal: Chinese Physics B The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally, {110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip. The scale effect was shown to be an intrinsic property of silicon.
Related Links	http://iopscience.iop.org/article/10.1088/1674-1056/26/11/116102/pdf
ISSN	16741056
e-ISSN	20583834
DOI	10.1088/1674-1056/26/11/116102
Journal	Chinese Physics B
Issue Number	11
Volume Number	26
Language	English
Publisher	IOP Publishing
Publisher Date	2017-10-01
Access Restriction	Open
Subject Keyword	Journal: Chinese Physics B Metallurgy and Metallurgical Engineering Numerical Simulations
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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