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High performance printed oxide field-effect transistors processed using photonic curing
| Content Provider | Scilit |
|---|---|
| Author | Garlapati, Suresh Kumar Marques, Gabriel Cadilha Gebauer, Julia Susanne Dehm, Simone Bruns, Michael Winterer, Markus Tahoori, Mehdi Baradaran Aghassi-Hagmann, Jasmin Hahn, Horst Dasgupta, Subho |
| Copyright Year | 2018 |
| Description | Journal: Nanotechnology Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/ printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as, low process temperatures, short exposure time and thereby high throughput compatibility. Here, using dissimilar photonic curing concepts (UV-visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability. |
| Related Links | http://iopscience.iop.org/article/10.1088/1361-6528/aab7a2/pdf |
| ISSN | 09574484 |
| e-ISSN | 13616528 |
| DOI | 10.1088/1361-6528/aab7a2 |
| Journal | Nanotechnology |
| Issue Number | 23 |
| Volume Number | 29 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2018-03-19 |
| Access Restriction | Open |
| Subject Keyword | Journal: Nanotechnology Oxide Semiconductors Field-effect Transistors |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering |
