NDLI: Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure

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Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure

Content Provider	Scilit
Author	Sorokin, L. M. Kalmykov, A. E. Myasoedov, Alehander Bessolov, V. N. Osipov, A. V. Kukushkin, S. A.
Copyright Year	2013
Description	Journal: Journal of Physics: Conference Series The structure of 10-μm-thick GaN layer grown by chloride vapour-phase epitaxy on 1.5-inch SiC/(001)Si templates has been investigated by transmission electron microscopy (TEM). The silicon carbide buffer layer has been fabricated by a new method of solid-phase synthesis. It was found that the GaN layer consists of oriented grains with size of tenths of a micron. The grains have wurtzite structure, and the {0001} GaN planes are oriented parallel to {111} Si, that is, the deviation of the axis c of GaN crystallite from the normal to the substrate is about 52°. The revealed epitaxial relationship between substrate and most grains is (023)GaN\|\|(001)3C-Si\|\|(001)Si and [20]GaN\|\|[110]3C-SiC\|\|[110]Si. Some inclusions of sphalerite gallium nitride were also found in the epilayer.
Related Links	http://iopscience.iop.org/article/10.1088/1742-6596/471/1/012033/pdf http://iopscience.iop.org/1742-6596/471/1/012033/pdf/1742-6596_471_1_012033.pdf
ISSN	17426588
e-ISSN	17426596
DOI	10.1088/1742-6596/471/1/012033
Journal	Journal of Physics: Conference Series
Issue Number	1
Volume Number	471
Language	English
Publisher	IOP Publishing
Publisher Date	2013-11-29
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics: Conference Series Applied Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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