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Strain-mediated electronic properties of pristine and Mn-doped GaN monolayers
| Content Provider | Scilit |
|---|---|
| Author | Sharma, Venus Srivastava, Sunita |
| Copyright Year | 2018 |
| Description | Journal: Materials Research Express Graphene-like two-dimensional (2D) monolayer structures GaN has gained enormous amount of interest due to high thermal stability and inherent energy band gap for practical applications. First principles calculations are performed to investigate the electronic structure and strain-mediated electronic properties of pristine and Mn-doped GaN monolayer. Binding energy of Mn dopant at various adsorption site is found to be nearly same indicating these sites to be equally favorable for adsorption of foreign atom. Depending on the adsorption site, GaN monolayer can act as p-type or n-type magnetic semiconductor. The tensile strength of both pristine and doped GaN monolayer (~24 GPa) at ultimate tensile strain of 34 % is comparable with the tensile strength of graphene. The in-plane biaxial strain modulate the energy band gap of both pristine and doped-monolayer from direct to indirect gap semiconductor and finally into metal at critical value of applied strain. These characteristics make GaN monolayer to be potential candidate for the future applications in tunable optoelectronics. |
| Related Links | http://iopscience.iop.org/article/10.1088/2053-1591/aab7d0/pdf |
| ISSN | 20531591 |
| e-ISSN | 20531591 |
| DOI | 10.1088/2053-1591/aab7d0 |
| Journal | Materials Research Express |
| Issue Number | 4 |
| Volume Number | 5 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2018-03-19 |
| Access Restriction | Open |
| Subject Keyword | Journal: Materials Research Express Condensed Matter Physics |
| Content Type | Text |
| Resource Type | Article |
| Subject | Surfaces, Coatings and Films Metals and Alloys Biomaterials Electronic, Optical and Magnetic Materials Polymers and Plastics |
