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Effect of Ga+ focused ion beam etching on photoluminescence of AlGaAs/GaAs heterostructure.
| Content Provider | Scilit |
|---|---|
| Author | Voznyuk, G. V. Levitskii, I. V. Mitrofanov, M. I. Nikolaev, D. N. Evtikhiev, V. P. |
| Copyright Year | 2018 |
| Description | Journal: Journal of Physics: Conference Series The effect of focused ion beam (FIB) etching by 30 keV $Ga^{+}$ on photoluminescence of AlGaAs/GaAs heterostructure is studied. During etching process, high-energy ions induce radiation defects that lead to a decrease of heterostructure internal quantum efficiency of luminescence. We used the SRIM software to simulate the radiation defects penetration depths in AlGaAs/GaAs heterostructure, then carried out FIB etching guided by received information. Annealing of the structure at 300 °C showed partial recovery of the internal quantum efficiency. Subsequent annealing at 620 °C showed almost full recovery of quantum efficiency depending on the etching depth. Experimental findings allowed us to affirm that FIB etching with subsequent annealing is a potential tool for making photonic nanodevices. |
| Related Links | http://iopscience.iop.org/article/10.1088/1742-6596/1038/1/012080/pdf |
| ISSN | 17426588 |
| e-ISSN | 17426596 |
| DOI | 10.1088/1742-6596/1038/1/012080 |
| Journal | Journal of Physics: Conference Series |
| Issue Number | 1 |
| Volume Number | 1038 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2018-06-14 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics: Conference Series Photoluminescence Algaas/gaas Heterostructure |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
