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Vacancy-related microdefects responsible for the formation of oxidation-induced stacking faults with ring-shaped distribution (R-OSFs) in Czochralski-grown Si
| Content Provider | Scilit |
|---|---|
| Author | Puzanov, N. I. Eidenzon, A. M. |
| Copyright Year | 1997 |
| Description | Journal: Semiconductor Science and Technology Thermal oxidation of large-sized Si wafers often results in the formation of a ring-shaped distribution of oxidation-induced stacking faults (the so-called R-OSF). A related phenomenon is the formation of annular bands of reduced oxygen precipitation in Si wafers heat-treated around . It is generally thought that these microdefect patterns are due to a local excess in self-interstitials established in growing crystals. Recently we have reported a model describing the formation of R-OSFs, which includes the premise that the grown-in vacancy-related microdefects ( defects) serve as nucleation centres for R-OSFs. The R-OSFs are found to emerge in those regions where the concentration of low-temperature centres for oxygen precipitation is locally reduced as a consequence of vacancy depletion. Here we report experiments that allow the determination of point-defect species involved in the formation of R-OSF nucleation centres during crystal growth. The selective interaction of {221}/{221} twin boundaries with native point defects is used for discriminating vacancies and self-interstitials. Dislocation-free Si tetracrystals grown under conditions that ensure transitions from the self-interstitial to vacancy defects are examined. The etching features of the {221}/{221} twin boundaries, which separate tetracrystals into four grains, differ between the vacancy and interstitial regions. The type and distribution of grown-in and thermally induced microdefects as well as the etching patterns developing at the twin boundaries suggest that it is vacancies rather than self-interstitials that are responsible for the formation of R-OSF nucleation centres in growing crystals. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/12/8/011/pdf |
| Ending Page | 997 |
| Page Count | 7 |
| Starting Page | 991 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/12/8/011 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 8 |
| Volume Number | 12 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1997-08-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Metallurgy and Metallurgical Engineering |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
