Ge-doped ZnO nanowire arrays as cold field emitters with excellent performance

Content Provider	Scilit
Author	Liang, Ying
Copyright Year	2019
Description	Journal: Nanotechnology Elemental doping is an efficient strategy to modify the electronic and optoelectronic properties of semiconductor materials. In this work, a high-quality Ge-doped tapered ZnO nanowire array was prepared via a simple chemical vapor deposition approach. The I-V and light emission behaviors were investigated based on a single nanowire with good electrical conductivity. The kelvin probe force microscopy (KPFM) and ultraviolet photoelectron spectroscopy (UPS) characterizations indicate that the doped nanowires possess a largely reduced work function relative to that of the pure ZnO nanostructures. These advantages allow Ge-doped ZnO nanowire arrays to deliver excellent field emission performance, including low turn-on and threshold fields, high emission current and long-term stability.
Related Links	https://iopscience.iop.org/article/10.1088/1361-6528/ab28ca/pdf
ISSN	09574484
e-ISSN	13616528
DOI	10.1088/1361-6528/ab28ca
Journal	Nanotechnology
Issue Number	37
Volume Number	30
Language	English
Publisher	IOP Publishing
Publisher Date	2019-06-11
Access Restriction	Open
Subject Keyword	Journal: Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering