NDLI: Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films

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Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films

Content Provider	Scilit
Author	Dong, Zhang Yi-Zhen, Bai Fu-Wen, Qin Ji-Ming, Bian Fu-Chao, Jia Zhan-Ling, Wu Ji-Jun, Zhao Xin, Jiang
Copyright Year	2010
Description	Journal: Chinese Physics Letters Prefer-oriented and fine grained polycrystalline GaN films are prepared by plasma enhanced metal organic chemical vapour deposition on nucleation surfaces of freestanding thick diamond films. The characteristics of the GaN films are characterized by x-ray diffraction, reflection high energy electron diffraction and atomic force microscopy. The results indicate that the structure and morphology of the films are strongly dependent on the deposition temperature. The most significant improvements in morphological and structural properties of GaN films are obtained under the proper deposition temperature of 400°C.
Related Links	http://iopscience.iop.org/article/10.1088/0256-307X/27/1/018102/pdf
ISSN	0256307X
e-ISSN	17413540
DOI	10.1088/0256-307x/27/1/018102
Journal	Chinese Physics Letters
Issue Number	1
Volume Number	27
Language	English
Publisher	IOP Publishing
Publisher Date	2010-01-01
Access Restriction	Open
Subject Keyword	Journal: Chinese Physics Letters Coatings and Films Freestanding Cvd Cvd Thick Gan Films Diamond Films Thick Diamond
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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