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Memory switching in films of oxide glasses containing bismuth
| Content Provider | Scilit |
|---|---|
| Author | Chakravorty, D. Murthy, C. S. |
| Copyright Year | 1975 |
| Description | Journal: Journal of Physics D: Applied Physics Negative resistance and memory switching effects have been observed in $Na_{2}O-B_{2}O_{3}-Bi_{2}O_{3}-SiO_{2}$ glass films of thicknesses between 2 and 14 mu m. The off-state resistance could possibly arise due to electron hopping between conducting islands of bismuth. The on-state characteristics suggest that the memory action might be due to the formation of metallic filaments between the bismuth particles. |
| Related Links | http://iopscience.iop.org/article/10.1088/0022-3727/8/13/004/pdf |
| Ending Page | L165 |
| Page Count | 4 |
| Starting Page | L162 |
| ISSN | 00223727 |
| e-ISSN | 13616463 |
| DOI | 10.1088/0022-3727/8/13/004 |
| Journal | Journal of Physics D: Applied Physics |
| Issue Number | 13 |
| Volume Number | 8 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1975-09-11 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics D: Applied Physics Metallurgy and Metallurgical Engineering Memory Switching Oxide Glasses Glasses Containing Films of Thicknesses |
| Content Type | Text |
| Resource Type | Article |
| Subject | Surfaces, Coatings and Films Acoustics and Ultrasonics Condensed Matter Physics Electronic, Optical and Magnetic Materials |
