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Photoluminescence properties of arsenic and boron doped Si3N4nanocrystal embedded in SiNxOymatrix
| Content Provider | Scilit |
|---|---|
| Author | Puglia, Denise Sombrio, Guilherme Reis, Roberto dos Boudinov, Henri Ivanov |
| Copyright Year | 2018 |
| Description | Journal: Materials Research Express Photoluminescence emission of Si3N4 nanocrystals embedded in SiNxOy matrices was investigated. Nanocrystals were grown by annealing of silicon oxynitride films deposited by sputtering, passivated in forming gas atmosphere and implanted with boron and arsenic. Emission energy was tuned from green to ultraviolet by changing the composition of SiNxOy matrices. Structural characterization of the nanocrystals was performed by Transmission Electron Microscopy. Photoluminescence at room and low temperatures was analyzed and the results suggest that light emission originates in the interface between the nanocrystals and the matrix. The highest photoluminescence intensity at room temperature was achieved by arsenic doped silicon oxynitride films deposited with an excess of nitrogen. |
| Related Links | http://iopscience.iop.org/article/10.1088/2053-1591/aaabe7/pdf |
| ISSN | 20531591 |
| e-ISSN | 20531591 |
| DOI | 10.1088/2053-1591/aaabe7 |
| Journal | Materials Research Express |
| Issue Number | 3 |
| Volume Number | 5 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2018-01-31 |
| Access Restriction | Open |
| Subject Keyword | Journal: Materials Research Express Photoluminescence Silicon Oxynitride Films Deposited |
| Content Type | Text |
| Resource Type | Article |
| Subject | Surfaces, Coatings and Films Metals and Alloys Biomaterials Electronic, Optical and Magnetic Materials Polymers and Plastics |
