Wafer-scale production of highly uniform two-dimensional $MoS_{2}$by metal-organic chemical vapor deposition

Content Provider	Scilit
Author	Kim, Taewan Mun, Jihun Park, Hyeji Joung, Daehwa Diware, Mangesh Won, Chegal Park, Jonghoo Jeong, Soo-Hwan Kang, Sang-Woo
Copyright Year	2017
Description	Journal: Nanotechnology Semiconducting two-dimensional (2D) materials, particularly extremely thin molybdenum disulfide $(MoS_{2}$) films, are attracting considerable attention from academia and industry owing to their distinctive optical and electrical properties. Here, we present the direct growth of a $MoS_{2}$ monolayer with unprecedented spatial and structural uniformity across an entire 8 inch $SiO_{2}$/Si wafer. The influences of growth pressure, ambient gases (Ar, $H_{2}$), and S/Mo molar flow ratio on the $MoS_{2}$ layered growth were explored by considering the domain size, nucleation sites, morphology, and impurity incorporation. Monolayer $MoS_{2}$-based field effect transistors achieve an electron mobility of 0.47 $cm^{2}$ $V^{−1}$ $s^{−1}$ and on/off current ratio of 5.4 × $10^{4}$. This work demonstrates the potential for reliable wafer-scale production of 2D $MoS_{2}$ for practical applications in next-generation electronic and optical devices.
Related Links	http://iopscience.iop.org/article/10.1088/1361-6528/aa6958/pdf
ISSN	09574484
e-ISSN	13616528
DOI	10.1088/1361-6528/aa6958
Journal	Nanotechnology
Issue Number	18
Volume Number	28
Language	English
Publisher	IOP Publishing
Publisher Date	2017-04-07
Access Restriction	Open
Subject Keyword	Journal: Nanotechnology Wafer Scale Production
Content Type	Text
Resource Type	Article
Subject	Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering