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Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates
| Content Provider | Scilit |
|---|---|
| Author | Pan, Hong-Liang Jin, Zhi Ma, Peng Guo, Jian-Nan Liu, Xin-Yu Ye, Tian-Chun Hong-Liang, Pan Dun, Shao-Bo Feng, Zhi-Hong |
| Copyright Year | 2011 |
| Description | Journal: Chinese Physics Letters Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition $Al_{2}$ $O_{3}$ as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of 1 μm, are larger than 800 MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors, which paves the way for high-performance graphene devices and circuits. |
| Related Links | http://iopscience.iop.org/article/10.1088/0256-307X/28/12/127202/pdf |
| ISSN | 0256307X |
| e-ISSN | 17413540 |
| DOI | 10.1088/0256-307x/28/12/127202 |
| Journal | Chinese Physics Letters |
| Issue Number | 12 |
| Volume Number | 28 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2011-12-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics Letters Quantum Science and Technology Telecommunications Field Effect Transistors Graphene Field Effect |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
