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Silicon dioxide sacrificial layer etching in surface micromachining
| Content Provider | Scilit |
|---|---|
| Author | Bühler, J. Steiner, F-P Baltes, H. |
| Copyright Year | 1997 |
| Description | Journal: Journal of Micromechanics and Microengineering Silicon dioxide sacrificial layer etching has become a major surface micromachining method to fabricate microsensors and microactuators often made of polycrystalline silicon. An overview of the materials available in integrated circuit manufacturing is given, and the etch mechanism and sacrificial layer etch kinetics are reviewed. Selectivity issues important for the proper choice of layers and etchants are addressed discussing the chemical attack of aluminum during long sacrificial layer etching, as an example. Various etchants known from other studies are compared: concentrated and dilute HF, buffered HF (BHF), nitric acid based etchants known as P-etch, R-etch, S-etch, as well as mixtures of HF and HCl, and vapor HF. `Pad-etch', an acetic acid/ammonium fluoride/ethyleneglycole solution is shown to have an enhanced selectivity against aluminum. Some device examples such as arrays of deflectable micromirrors demonstrate the versatile application of sacrificial oxide etching in surface micromachining. |
| Related Links | http://iopscience.iop.org/article/10.1088/0960-1317/7/1/001/pdf |
| ISSN | 09601317 |
| e-ISSN | 13616439 |
| DOI | 10.1088/0960-1317/7/1/001 |
| Journal | Journal of Micromechanics and Microengineering |
| Issue Number | 1 |
| Volume Number | 7 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1997-03-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Micromechanics and Microengineering Applied Physics Surface Micromachining Sacrificial Layer Etching |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology Mechanics of Materials Electronic, Optical and Magnetic Materials Mechanical Engineering Electrical and Electronic Engineering |
