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Band-to-band tunneling mechanism observed at room temperature in lateral non-degenerately doped nanoscale p-n and p-i-n silicon devices
| Content Provider | Scilit |
|---|---|
| Author | Udhiarto, Arief Nuryadi, Ratno Anwar, Miftahul Prabhudesai, Gaurang Moraru, Daniel |
| Copyright Year | 2021 |
| Description | Journal: Japanese Journal of Applied Physics Non-degenerately doped lateral nanoscale p-n and p-i-n silicon-on-insulator devices have been fabricated and characterized at room temperature (297 K). In both types of devices, p-type Si substrate is used as a backgate to modify the potential in the top Si layer in both forward- and reverse-bias regimes. In the forward-bias regime, both types of devices exhibit negative differential transconductance (NDT), with the current peak position and level controlled by the backgate and anode voltage. In the reverse-bias regime, the devices exhibit a sharp current increase as a function of the backgate voltage, which is a signature of the band-to-band tunneling (BTBT) mechanism. These findings suggest that NDT and the sharp increase of current, induced by the contribution of the BTBT mechanism, can be achieved even in non-degenerately doped backgated diodes, which opens new possibilities for BTBT-based functionalities, benefiting from a simple design and CMOS compatibility. |
| Related Links | https://iopscience.iop.org/article/10.35848/1347-4065/abd69d/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.35848/1347-4065/abd69d |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 2 |
| Volume Number | 60 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2021-01-21 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Peripheral Vascular Disease Band To Band Tunneling |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
