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Alternating current characterization of sputter deposited Ti oxide films
| Content Provider | Scilit |
|---|---|
| Author | Rodríguez, J. Gómez, Mónica Niklasson, G. A. Granqvist, C. G. |
| Copyright Year | 1999 |
| Description | Journal: Journal of Physics D: Applied Physics Ti oxide films with varying stoichiometries and different crystal structures were prepared by reactive direct current magnetron sputtering in oxygen-depleted plasmas. The complex dielectric permittivity was determined in the $10^{-3}$ $-10^{7}$ Hz range from measurements using a capacitor configuration. The real and imaginary parts of displayed power-law dependences from ~10 Hz up to a value between 1 and 10 kHz. Our data could be rationalized in terms of a model for screened hopping of vacancy-induced charge carriers, but the details remain poorly understood. |
| Related Links | http://iopscience.iop.org/article/10.1088/0022-3727/33/1/304/pdf |
| Ending Page | 27 |
| Page Count | 4 |
| Starting Page | 24 |
| ISSN | 00223727 |
| e-ISSN | 13616463 |
| DOI | 10.1088/0022-3727/33/1/304 |
| Journal | Journal of Physics D: Applied Physics |
| Issue Number | 1 |
| Volume Number | 33 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1999-12-22 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics D: Applied Physics Metallurgy and Metallurgical Engineering Sputter Deposited Current Characterization Deposited Ti Crystal Structures Dielectric Permittivity Magnetron Sputtering Ti Oxide Films |
| Content Type | Text |
| Resource Type | Article |
| Subject | Surfaces, Coatings and Films Acoustics and Ultrasonics Condensed Matter Physics Electronic, Optical and Magnetic Materials |
