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Comparative performance analysis of Carbon Nanotube and Si-Nanotube based Field effect Transistors
| Content Provider | Scilit |
|---|---|
| Author | Kumar, Raj Bala, Shashi Kumar, Arvind |
| Copyright Year | 2021 |
| Description | Journal: Iop Conference Series: Materials Science and Engineering The continuous scaling of scaling of conventional planar transistors has migrated to nanoscale regime to achieve better performance of the device by mainstream semiconductor industry. To suppress the short channel effects arises in nanoscale devices, many 3D devices and materials have been proposed and investigated. Carbon Nanotube can be used as best materials for replacement of channel material MOSFET transistors due to its good electrical properties. Silicon nanotube field effect transistor is having two gates as an inner and outer gates, provides excellent electrostatic control and short channel effects immunity. In this paper, Carbon Nanotube Field Effect Transistor and Si- Nanotube field effect transistors have been designed and investigated. Performance of CNTFET and Si-NT MOSFET has been analysed and compared. These two field effect transistors may be considered for future of semiconductor industry. |
| Related Links | https://iopscience.iop.org/article/10.1088/1757-899X/1033/1/012028/pdf |
| ISSN | 17578981 |
| e-ISSN | 1757899X |
| DOI | 10.1088/1757-899x/1033/1/012028 |
| Journal | Iop Conference Series: Materials Science and Engineering |
| Issue Number | 1 |
| Volume Number | 1033 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2021-01-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Iop Conference Series: Materials Science and Engineering Carbon Nanotube Si Nanotube Field Effect Transistors Nanotube Field |
| Content Type | Text |
| Resource Type | Article |
