NDLI: Influence of stacking disorder on the photoconductivity of GaSe

Content Provider	Scilit
Author	Kuznicki, Z. T. Maschke, K. Schmid, Ph
Copyright Year	1979
Description	Journal: Journal of Physics C: Solid State Physics The anisotropy of the photocurrent as a function of photon energy has been measured in the range of the fundamental gap of GaSe. A high, temperature-sensitive, anisotropy of the photocurrent is observed for light energies slightly higher than the gap. The results give independent evidence for the disorder-induced localisation of the electronic states along the crystallographic c axis and confirm the interpretation of the DC and drift conductivity properties of this material.
Related Links	http://iopscience.iop.org/article/10.1088/0022-3719/12/18/019/pdf
Ending Page	3755
Page Count	7
Starting Page	3749
ISSN	00223719
DOI	10.1088/0022-3719/12/18/019
Journal	Journal of Physics C: Solid State Physics
Issue Number	18
Volume Number	12
Language	English
Publisher	IOP Publishing
Publisher Date	1979-09-28
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics C: Solid State Physics Condensed Matter Physics Energies Slightly Photoconductivity Properties of This Material Stacking Disorder
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Condensed Matter Physics Engineering

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Influence of stacking disorder on the photoconductivity of GaSe