Sensitivity Performance of Single Wall Carbon Nanotubes Gas Sensor on Silicon and Porous Silicon

Content Provider	Scilit
Author	Naje, Asama N. Mahmood, Waleed K.
Copyright Year	2018
Description	Journal: Iop Conference Series: Materials Science and Engineering Pure single walled carbon nanotubes (pure-SWCNTs) and Functionalized single walled nanotubes (F-SSWCNTs) have been utilized to the manufactured nitrogen dioxide gas sensor. CNTs films have been deposited on (n-type) silicon and porous silicon substrate by drop casting method. A porous silicon layer (PS) was prepared via electrochemical etching. The applied current density was 20 mA / $cm^{2}$, and the typical electrochemical-etching time was chosen to be about 20 minutes. Upon exposure to fixed test gas mixing ratio (air: gas) $NO_{2}$ at different operating temperatures, the sensitivity response results show that Pure single walled carbon nanotubes and Functionalized single walled nanotubes deposited on porous silicon have better performances than that deposited on silicon. At RT the F-SWCNTs/Ps sensitivity reaches to 36%, the response and recovery time is about 11 s and 26 s, whereas for SWCNTs/Ps the sensitivity 13.5%, the response and recovery time is about 13 s and 24 s.
Related Links	http://iopscience.iop.org/article/10.1088/1757-899X/454/1/012070/pdf
ISSN	17578981
e-ISSN	1757899X
DOI	10.1088/1757-899x/454/1/012070
Journal	Iop Conference Series: Materials Science and Engineering
Issue Number	1
Volume Number	454
Language	English
Publisher	IOP Publishing
Publisher Date	2018-12-12
Access Restriction	Open
Subject Keyword	Journal: Iop Conference Series: Materials Science and Engineering Characterization and Testing of Materials
Content Type	Text
Resource Type	Article