NDLI: Growth, structural and optical characterization of wurtzite GaP nanowires

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Growth, structural and optical characterization of wurtzite GaP nanowires

Content Provider	Scilit
Author	Maliakkal, Carina B. Gokhale, Mahesh Parmar, Jayesh Bapat, Rudheer D. Chalke, Bhagyashree A. Ghosh, Sandip Bhattacharya, Arnab
Copyright Year	2019
Description	Journal: Nanotechnology Bulk gallium phosphide (GaP) crystallizes in the zinc-blende structure and has an indirect bandgap. However, GaP nanowires can be synthesized in the wurtzite phase. The contradictory theoretical predictions and experimental reports on the band-structure of wurtzite GaP suggests a direct or a pseudo-direct bandgap. There are only a few reports of the growth and luminescence from wurtzite and zinc-blende GaP nanowires. We first present a comprehensive study of the gold catalyzed growth of GaP nanowires via metalorganic vapour phase epitaxy on various crystalline and amorphous substrates. We optimized the growth parameters like temperature, pressure and reactant flow rates to grow wurtzite GaP nanowires with minimal taper. These wires were characterized using electron microscopy, X-ray diffraction, Raman scattering and photoluminescence spectroscopy. The luminescence studies of bare GaP NWs and GaP/AlGaP core shell heterostructures with wurtzite and zinc-blende phase GaP cores suggest that wurtzite phase GaP has a pseudo-direct bandgap with weak near-band-edge luminescence intensity.
Related Links	https://iopscience.iop.org/article/10.1088/1361-6528/ab0a46/pdf
ISSN	09574484
e-ISSN	13616528
DOI	10.1088/1361-6528/ab0a46
Journal	Nanotechnology
Issue Number	25
Volume Number	30
Language	English
Publisher	IOP Publishing
Publisher Date	2019-02-25
Access Restriction	Open
Subject Keyword	Journal: Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering

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