NDLI: Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

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Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

Content Provider	Scilit
Author	Egawa, Takashi Nakamura, Kouichi Ishikawa, Hiroyasu Jimbo, Takashi Umeno, Masayoshi
Copyright Year	1999
Description	Journal: Japanese Journal of Applied Physics Electron mobilities of an n-GaN layer on a sapphire substrate grown by metalorganic chemical vapor deposition were 585 and 1217 $cm^{2}$/V·s with electron carrier concentrations of $1.1×10^{17}$ and $2.4×10^{16}$ $cm^{-3}$ at 300 and 77 K, respectively. A high current level of 281 mA/mm and a large transconductance (g$ _{m}$) of 33 mS/mm have been achieved for a GaN metal semiconductor field-effect transistor (MESFET) with a gate length of 2 µm and a width of 200 µm at 25°C. The GaN MESFET at high temperature showed degraded characteristics: low g$ _{m}$, gate leakage and poor pinch-off. However, the GaN MESFET at 25°C, measured again after measurement at 400°C, showed the initial characteristic in spite of gate leakage. The GaN MESFET exhibited the sidegating effect, which was thought to be caused by the deep level in the undoped GaN layer beneath the channel layer. The uniformity of the sheet resistance seems to be insensitive to the high dislocation density in the GaN layer.
Related Links	http://iopscience.iop.org/article/10.1143/JJAP.38.2630/pdf
Ending Page	2633
Page Count	4
Starting Page	2630
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.38.2630
Journal	Japanese Journal of Applied Physics
Issue Number	4S
Volume Number	38
Language	English
Publisher	IOP Publishing
Publisher Date	1999-04-01
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Field Effect Transistor Schottky Diode
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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