Semiclassical interband tunnelling probability in semiconductor heterostructures

Content Provider	Scilit
Author	Zhakharova, A. Ryzhii, Victor Pesotzkii, V.
Copyright Year	1994
Description	Journal: Semiconductor Science and Technology A new semiclassical method to calculate the characteristics of interband tunnelling devices is proposed. This method generalizes the approach developed earlier for the case of interfaces non-perpendicular to the particle wavevector. It allows one to obtain analytical expressions for the tunnelling probability T in semiconductor structures with abrupt heterojunctions. The characteristics of InAs/AlGaSb/InAs, InAs/AlGaSb/GaSb diodes are calculated using the developed method. All results are compared with those from the classical WKB approach and the transfer matrix method to determine the tunnelling probability.
Related Links	http://iopscience.iop.org/article/10.1088/0268-1242/9/1/008/pdf
Ending Page	48
Page Count	8
Starting Page	41
ISSN	02681242
e-ISSN	13616641
DOI	10.1088/0268-1242/9/1/008
Journal	Semiconductor Science and Technology
Issue Number	1
Volume Number	9
Language	English
Publisher	IOP Publishing
Publisher Date	1994-01-01
Access Restriction	Open
Subject Keyword	Journal: Semiconductor Science and Technology Applied Physics Transfer Matrix Method
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering