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Improvement in performance of solution-processed indium–zinc–tin oxide thin-film transistors by $UV/O_{3}$treatment on zirconium oxide gate insulator
| Content Provider | Scilit |
|---|---|
| Author | Naik, Bukke Ravindra Avis, Christophe Chowdhury, Delwar Hossain Kim, Taehun Lin, Tengda Jang, Jin |
| Copyright Year | 2016 |
| Description | Journal: Japanese Journal of Applied Physics We studied solution-processed amorphous indium–zinc–tin oxide (a-IZTO) thin-film transistors (TFTs) with spin-coated zirconium oxide $(ZrO_{x}$) as the gate insulator. The $ZrO_{x}$ gate insulator was used without and with $UV/O_{3}$ treatment. The TFTs with an untreated $ZrO_{x}$ gate dielectric showed a saturation mobility $(μ_{sat}$) of 0.91 ± 0.29 $cm^{2}$ $V^{−1}$ $s^{−1}$, a threshold voltage $(V_{th}$) of 0.28 ± 0.36 V, a subthreshold swing (SS) of 199 ± 37.17 mV/dec, and a current ratio $(I_{ON}/I_{OFF)}$ of $~10^{7}$. The TFTs with a $UV/O_{3}$-treated $ZrO_{x}$ gate insulator exhibited $μ_{sat}$ of 2.65 ± 0.43 $cm^{2}$ $V^{−1}$ $s^{−1}$, $V_{th}$ of 0.44 ± 0.35 V, SS of 133 ± 24.81 mV/dec, and $I_{ON}/I_{OFF}$ of $~10^{8}$. Hysteresis was 0.32 V in the untreated TFTs and was eliminated by $UV/O_{3}$ treatment. Also, the leakage current decreased significantly when the IZTO TFT was coated onto a $UV/O_{3}$-treated $ZrO_{x}$ gate insulator. |
| Related Links | http://iopscience.iop.org/article/10.7567/JJAP.55.03CC02/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.7567/jjap.55.03cc02 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 3S1 |
| Volume Number | 55 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-02-08 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Peripheral Vascular Disease |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
