NDLI: Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast

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Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast

Content Provider	Scilit
Author	Mehrtens, T. Schowalter, M. Tytko, D. Choi, P. Raabe, Dierk Hoffmann, L. Jönen, H. Rossow, U. Hangleiter, Andreas Rosenauer, Andreas
Copyright Year	2013
Description	Journal: Journal of Physics: Conference Series In this contribution, the indium concentration profile of an $In_{x}Ga_{1−x}$N/GaN five-fold multi quantum well structure is measured from high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) images. The results are compared with an atom probe tomography study. Indium concentrations in the range of 26 at.% to 33 at.% are measured in the centre of the quantum wells. An additional indium layer of 14 at.% has been found on top of the quantum wells. In the second part, the temperature dependence of measured intensities in GaN is investigated. Here, multislice calculations in the frozen lattice approximation are carried out in dependence of specimen thickness and compared to experimental data. An increase of intensity with specimen temperature is found.
Related Links	http://iopscience.iop.org/article/10.1088/1742-6596/471/1/012009/pdf
ISSN	17426588
e-ISSN	17426596
DOI	10.1088/1742-6596/471/1/012009
Journal	Journal of Physics: Conference Series
Issue Number	1
Volume Number	471
Language	English
Publisher	IOP Publishing
Publisher Date	2013-11-29
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics: Conference Series Microscopic Research Temperature Dependence Quantum Wells Indium Concentrations
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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