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Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors
| Content Provider | Scilit |
|---|---|
| Author | Yan, Shi-Li Xie, Zhi-Jian Chen, Jian-Hao Taniguchi, Takashi Watanabe, Kenji |
| Copyright Year | 2017 |
| Description | Journal: Chinese Physics Letters The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronics, thermoelectric power generation and thermal imaging. |
| Related Links | http://arxiv.org/pdf/1703.08303 http://iopscience.iop.org/article/10.1088/0256-307X/34/4/047304/pdf |
| ISSN | 0256307X |
| e-ISSN | 17413540 |
| DOI | 10.1088/0256-307x/34/4/047304 |
| Journal | Chinese Physics Letters |
| Issue Number | 4 |
| Volume Number | 34 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2017-03-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics Letters Quantum Science and Technology Telecommunications Field Effect Transistors Thermoelectric Power |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
