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Investigation of the photoluminescence of porous silicon layers obtained under various technological conditions
| Content Provider | Scilit |
|---|---|
| Author | Pastukhov, A. I. Belorus, A. O. Spivak, Yu. M. Moshnikov, V. A. |
| Copyright Year | 2018 |
| Description | Journal: Journal of Physics: Conference Series The article considers the information about optical properties of porous silicon layers. Samples were obtained using electrochemical and photoelectrochemical anodic etching methods. The monocrystalline n-type (phosphorus doping) silicon was used as the initial material for preparation. It is shown, that the photoluminescence intensity and wavelength, surface morphology of porous silicon samples are hinge on many technological conditions. The results can be used to estimate an advisability of porous silicon particles application as biomarkers; LED and other optical devices creation. |
| Related Links | https://iopscience.iop.org/article/10.1088/1742-6596/1038/1/012048/pdf http://iopscience.iop.org/article/10.1088/1742-6596/1038/1/012048/pdf |
| ISSN | 17426588 |
| e-ISSN | 17426596 |
| DOI | 10.1088/1742-6596/1038/1/012048 |
| Journal | Journal of Physics: Conference Series |
| Issue Number | 1 |
| Volume Number | 1038 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2018-06-14 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics: Conference Series Photoluminescence Photoelectrochemical |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
