NDLI: Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H2 plasma treatment at n/i and i/p interface

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Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H2 plasma treatment at n/i and i/p interface

Content Provider	Scilit
Author	Madaka, Ramakrishna Kanneboina, Venkanna Agarwal, Pratima
Copyright Year	2018
Description	Journal: Semiconductor Science and Technology The a-Si:H based n-i-p solar cells were fabricated on flexible polyethylene terephthalate (PET), polyimide (PI) and rigid glass substrates with a-SiC:H(p) as a window layer using rf-PECVD technique. The effect of methane flow rate (MFR) on the structural and optoelectronic properties of a-SiC:H(p) films deposited at a low substrate temperature (Ts) 110°C were studied on Corning 1737 glass (glass) substrate. The influence of hydrogen plasma treatment (HPT) at n/i and i/p interface of solar cells was also investigated. The HPT at interfaces was found to minimize interface defects and enhance the optical and electrical properties of the solar cell. The solar cell with a-SiC:H(p) as a window layer with HPT at interfaces have shown improvement in the series resistance (Rs), shunt resistance(Rsh), open circuit voltage (Voc) and fill factor (FF) as compared to the solar cells fabricated with conventional a-Si:H(p). The efficiencies of fabricated solar cell at 110°C on flexible PET and PI are 3.36 and 4.06 %, which is close to 4.42% on rigid glass. Our results demonstrate that, a-SiC:H(p) as a window layer with HPT at n/i and i/p interfaces can be considered as a practical method to produce the a-Si:H based solar cells on low cost flexible substrates at low substrate temperature.
Related Links	http://iopscience.iop.org/article/10.1088/1361-6641/aac8ca/pdf
ISSN	02681242
e-ISSN	13616641
DOI	10.1088/1361-6641/aac8ca
Journal	Semiconductor Science and Technology
Issue Number	8
Volume Number	33
Language	English
Publisher	IOP Publishing
Publisher Date	2018-05-30
Access Restriction	Open
Subject Keyword	Journal: Semiconductor Science and Technology
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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