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Analysis of structural, optical and electrical properties of metal/p-ZnO-based Schottky diode
| Content Provider | Scilit |
|---|---|
| Author | Agarwal, Lucky Tripathi, Shweta Chakrabarti, P. |
| Copyright Year | 2017 |
| Description | Journal: Journal of Semiconductors A systematic study of the behaviour of Pd/p-ZnO thin film Schottky diode has been reported. The p-type ZnO thin film with improved stability has been grown on n-type Si by doping ZnO with copper. Seebeck measurement confirmed the p-type nature of Cu-doped ZnO thin film. The X-ray diffraction spectra of the deposited film revealed polycrystalline nature with preferred growth orientation of (101) of ZnO film. The surface morphological study demonstrated the conformal deposition of a thin film over n-Si wafer. The estimated bandgap of Cu-doped p-type ZnO thin film from ellipsometric measurement turns out to be 3.14 eV at 300 K. The measured electrical parameters of the proposed Pd/p-ZnO Schottky diode have also been validated by the results of numerical simulation obtained by using $ATLAS^{TM}$ device simulator. |
| Related Links | http://iopscience.iop.org/article/10.1088/1674-4926/38/10/104002/pdf |
| ISSN | 16744926 |
| e-ISSN | 20586140 |
| DOI | 10.1088/1674-4926/38/10/104002 |
| Journal | Journal of Semiconductors |
| Issue Number | 10 |
| Volume Number | 38 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2017-10-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Semiconductors Condensed Matter Physics Numerical Simulation Pd/p Zno Zno Thin Film |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
