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O$ _{3}$ fast and simple treatment-enhanced p-doped in Spiro-MeOTAD for CH$ _{3}$ NH$ _{3}$ I vapor-assisted processed CH$ _{3}$ NH$ _{3}$ PbI$ _{3}$ perovskite solar cells
| Content Provider | Scilit |
|---|---|
| Author | Jia, En-Dong Lou, Xi Zhou, Chun-Lan Hao, Wei-Chang Wang, Wen-Jing |
| Copyright Year | 2017 |
| Description | Journal: Chinese Physics B We demonstrate a simple and fast post-deposition treatment with high process compatibility on the hole transport material (HTM) Spiro-MeOTAD in vapor-assisted solution processed methylammonium lead triiodide $(CH_{3}NH_{3}PbI_{3}$)-based solar cells. The prepared Co-doped p-type Spiro-MeOTAD films are treated by $O_{3}$ at room temperature for 5 min, 10 min, and 20 min, respectively, prior to the deposition of the metal electrodes. Compared with the traditional oxidation of Spiro-MeOTAD films overnight in dry air, our fast $O_{3}$ treatment of HTM at room temperature only needs just 10 min, and a relative 40.3% increment in the power conversion efficiency is observed with respect to the result of without-treated perovskite solar cells. This improvement of efficiency is mainly attributed to the obvious increase of the fill factor and short-circuit current density, despite a slight decrease in the open-circuit voltage. Ultraviolet photoelectron spectroscopy (UPS) and Hall effect measurement method are employed in our study to determine the changes of properties after $O_{3}$ treatment in HTM. It is found that after the HTM is exposed to $O_{3}$, its p-type doping level is enhanced. The enhancement of conductivity and Hall mobility of the film, resulting from the improvement in p-doping level of HTM, leads to better performances of perovskite solar cells. Best power conversion efficiencies (PCEs) of 13.05% and 16.39% are achieved with most properly optimized HTM via $CH_{3}NH_{3}$I vapor-assisted method and traditional single-step method respectively. |
| Related Links | http://iopscience.iop.org/article/10.1088/1674-1056/26/6/068803/pdf |
| ISSN | 16741056 |
| e-ISSN | 20583834 |
| DOI | 10.1088/1674-1056/26/6/068803 |
| Journal | Chinese Physics B |
| Issue Number | 6 |
| Volume Number | 26 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2017-06-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics B Condensed Matter Physics Conversion Efficiencies Power Conversion Efficiency Treatment in Htm Doped P Type |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
