The Effects of Substrate Surface Treatments on Growth of $a$-Plane GaN Single Crystals Using Na Flux Method

Content Provider	Scilit
Author	Masumoto, Keiko Murakami, Kosuke Imabayashi, Hiroki Takazawa, Hideo Todoroki, Yuma Matsuo, Daisuke Kitamoto, Akira Maruyama, Mihoko Imade, Mamoru Yoshimura, Masashi Kitaoka, Yasuo Sasaki, Takatomo Mori, Yusuke
Copyright Year	2012
Description	Journal: Japanese Journal of Applied Physics Nonpolar GaN substrates are necessary for the improvement of GaN device performance. The growth of high-quality nonpolar GaN crystals, however, has not yet been achieved. In this study, we grew a-plane GaN crystals using the Na flux method and investigated the effects of the substrate surface treatment on the crystallinity of grown GaN crystals. A-plane GaN substrates with chemical mechanical polishing (CMP) and with chemical etching using pyrophosphoric acid were used as the seed substrates. We found that full width at the half-maximum (FWHM) of the X-ray rocking curve (XRC) of GaN crystals grown on the substrate with chemical etching was smaller than that on the substrate with CMP. The results show that chemical etching is more effective than CMP for improving the crystallinity of a-plane GaN crystals.
Related Links	http://iopscience.iop.org/article/10.1143/JJAP.51.035501/pdf
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.51.035501
Journal	Japanese Journal of Applied Physics
Issue Number	3R
Volume Number	51
Language	English
Publisher	IOP Publishing
Publisher Date	2012-02-16
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Cultural Studies Plane Gan Chemical Etching
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering