Loading...
Please wait, while we are loading the content...
Room temperature magnetoresistance in $Fe_{3}Si/CaF_{2}/Fe_{3}$Si MTJ epitaxially grown on Si(111)
| Content Provider | Scilit |
|---|---|
| Author | Harada, K. Makabe, K. S. Akinaga, H. Suemasu, T. |
| Copyright Year | 2011 |
| Description | Journal: Journal of Physics: Conference Series A tunnel magnetoresistance has been investigated for $Fe_{3}Si/CaF_{2}/Fe_{3}$Si magnetic tunnel junctions (MTJs). We fabricated $Fe_{3}$Si(20 $nm)/CaF_{2}$(2 $nm)/Fe_{3}$Si(15 nm) heterostructures on a $CaF_{2}$(2 nm)/Si(111) substrate by molecular beam epitaxy (MBE) and processed them into 300×15 $mm^{2}$-area MTJs using selective wet chemical etching and conventional photolithography. The current-voltage (J-V) characteristics for the MTJs measured at room temperature (RT) were well fitted to Simmons' equation. The fitting yields the barrier height = 2.5 eV and the barrier thickness d = 1.26 nm. The magnetoresistance curve for the MTJs reaches a maximum in the range of 100-200 Oe and the magnetoresistance ratio is approximately 0.28% under a bias voltage of 20 mV at RT. |
| Related Links | http://iopscience.iop.org/article/10.1088/1742-6596/266/1/012088/pdf |
| ISSN | 17426588 |
| e-ISSN | 17426596 |
| DOI | 10.1088/1742-6596/266/1/012088 |
| Journal | Journal of Physics: Conference Series |
| Issue Number | 1 |
| Volume Number | 266 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2011-01-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics: Conference Series Applied Physics Molecular Beam Epitaxy Magnetic Tunnel Junction Room Temperature |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
