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The Effect of Current Compliance on the Resistive Switching Behaviors in $TiN/ZrO_{2}$/Pt Memory Device
| Content Provider | Scilit |
|---|---|
| Author | Sun, Bing Liu, Lifeng Xu, Nuo Gao, Bin Wang, Yi Han, Dedong Liu, Xiaoyan Han, Ruqi Kang, Jinfeng |
| Copyright Year | 2009 |
| Description | Journal: Japanese Journal of Applied Physics In this paper, $TiN/ZrO_{2}$/Pt sandwiched resistive switching memory devices were fabricated. The effect of set current compliance on the resistive switching behaviors in $TiN/ZrO_{2}$/Pt memory device was studied. The different dependence of low resistance state on the set current compliance were observed under the different magnitudes of set current compliance: 1) the average read current was linearly dependent on the set current compliance in the magnitude of low set current compliance; 2) then a weaker dependence of the average read current on the set current compliance was observed in the magnitude of higher set current compliance; 3) when the current compliance is high enough, the unipolar resistive switching behaviors instead of the bipolar resistive switching was shown. A physical model based on oxygen vacancy conducting filamentary paths is proposed to explain the effect of set current compliance on the resistive switching behaviors in $TiN/ZrO_{2}$/Pt memory device. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.48.04C061/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.48.04c061 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 4 |
| Volume Number | 48 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2009-04-20 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Nuclear Energy and Engineering Resistive Switching Set Current Compliance |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
