NDLI: Tungsten oxide nanowires grown on amorphous-like tungsten films

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Tungsten oxide nanowires grown on amorphous-like tungsten films

Content Provider	Scilit
Author	Dellasega, D. Pietralunga, Silvia Maria Pezzoli, A. Russo, Valeria Nasi, L. Conti, C. Vahid, M. J. Tagliaferri, Alberto Passoni, M.
Copyright Year	2015
Description	Journal: Nanotechnology Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500–710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W18O49-Magneli phase to monoclinic WO3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures.
Related Links	https://re.public.polimi.it/retrieve/handle/11311/968021/46524/Postprint%20WOx%20NW_final.pdf http://iopscience.iop.org/0957-4484/26/36/365601/pdf/0957-4484_26_36_365601.pdf
ISSN	09574484
e-ISSN	13616528
DOI	10.1088/0957-4484/26/36/365601
Journal	Nanotechnology
Issue Number	36
Volume Number	26
Language	English
Publisher	IOP Publishing
Publisher Date	2015-08-17
Access Restriction	Open
Subject Keyword	Journal: Nanotechnology Metallurgy and Metallurgical Engineering Pulsed Laser Deposition
Content Type	Text
Resource Type	Article
Subject	Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering

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