Photovoltaic properties of single-crystal CdS-Cu2S cells

Content Provider	Scilit
Author	Wilson, J. I. B. Woods, J.
Copyright Year	1972
Description	Journal: Journal of Physics D: Applied Physics Photovoltaic cells have been prepared by plating a variety of undoped and doped single-crystal slices of CdS with $Cu_{2}$S. The dopants investigated included copper, indium and chlorine. It is shown that the optimum starting material for maximum photovoltaic efficiency is copper doped with CdS with a dark resistivity of the order $10^{2}$ Ω cm. Devices prepared on copper-doped crystals have such desirable features as fast speed of response, good temperature stability and saturation of the open-circuit voltage at low light intensities. Good efficiency is only obtained in cells formed on undoped CdS after a period of baking in air at 200 °C, which reduces their speed of response and introduces some other undesirable features. These effects are thought to originate with optical absorption processes in a high-resistivity, photoconductive region of CdS which is produced by copper diffusion at the interface.
Related Links	http://iopscience.iop.org/article/10.1088/0022-3727/5/9/327/pdf
Ending Page	1711
Page Count	12
Starting Page	1700
ISSN	00223727
e-ISSN	13616463
DOI	10.1088/0022-3727/5/9/327
Journal	Journal of Physics D: Applied Physics
Issue Number	9
Volume Number	5
Language	English
Publisher	IOP Publishing
Publisher Date	1972-09-01
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics D: Applied Physics Condensed Matter Physics
Content Type	Text
Resource Type	Article
Subject	Surfaces, Coatings and Films Acoustics and Ultrasonics Condensed Matter Physics Electronic, Optical and Magnetic Materials