NDLI: Sub-Atomic Layer Growth of SiC at Low Temperatures

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Sub-Atomic Layer Growth of SiC at Low Temperatures

Content Provider	Scilit
Author	Sadayuki, Eiichi Sadayuki Eiichi Imai, Shigeru Imai Shigeru Matsumura, Masakiyo Matsumura Masakiyo
Copyright Year	1995
Description	Journal: Japanese Journal of Applied Physics Sub-atomic layer growth of SiC has been achieved using diethylsilane $((C_{2}H_{5})_{2}SiH_{2}$) by resolving elemental kinetics of its chemical vapor deposition. The growth rate of 0.1 monolayer/cycle was obtained over the temperature range between 590°C and 675°C. The detailed growth characteristics, the composition of the grown film, and the surface morphology have been presented. The initial growth and the coverage of the grown film were also investigated by X-ray photoelectron spectroscopy.
Related Links	http://iopscience.iop.org/article/10.1143/JJAP.34.6166/pdf
Ending Page	6170
Page Count	5
Starting Page	6166
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.34.6166
Journal	Japanese Journal of Applied Physics
Issue Number	11R
Volume Number	34
Language	English
Publisher	IOP Publishing
Publisher Date	1995-11-01
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Auger Electron Spectroscopy X Ray Photoelectron Spectroscopy Atomic Force Microscopy Atomic Layer Epitaxy
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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