NDLI: Transparent resistive switching memory using aluminum oxide on a flexible substrate

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Transparent resistive switching memory using aluminum oxide on a flexible substrate

Content Provider	Scilit
Author	Yeom, Seung-Won Shin, Sang-Chul Kim, Tan-Young Ha, Hyeon Jun Lee, Yun-Hi Shim, Jae Won Ju, Byeong-Kwon
Copyright Year	2016
Description	Journal: Nanotechnology Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an $Al_{2}O_{3}$-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400–800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin $Al_{2}O_{3}$ layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole–Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the $Al_{2}O_{3}$ layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.
Related Links	http://iopscience.iop.org/article/10.1088/0957-4484/27/7/07LT01/pdf
ISSN	09574484
e-ISSN	13616528
DOI	10.1088/0957-4484/27/7/07lt01
Journal	Nanotechnology
Issue Number	7
Volume Number	27
Language	English
Publisher	IOP Publishing
Publisher Date	2016-01-14
Access Restriction	Open
Subject Keyword	Journal: Nanotechnology Applied Physics Resistive Switching
Content Type	Text
Resource Type	Article
Subject	Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering

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